Перспективы применения микрорезонаторов Фабри–Перо для тепловизионной техники

The results of study of the developed IR system based on the Fabry–Perot microresonator, functioning on the basis of the thermal-optical effect, are presented for its possible application in thermal imaging technology. The tuning factor of the Fabry–Perot microresonator calculated from the experimental data was kT = 0.44 nm/°С. An array of Fabry–Perot microresonators with pixel resonators in the form of 8 × 8 µm2 squares with a 2 µm gap in the amount of 640 × 480 pieces was made. It is shown that the characteristics of the developed thermal imaging system are not inferior to thermal imaging systems of a comparable class.Представлены результаты исследований разработанной ИК-системы на базе микрорезонатора Фабри– Перо, функционирующей на основе термооптического эффекта, для ее возможного применения в тепловизионной технике. Рассчитанный по экспериментальным данным коэффициент перестройки микрорезонатора Фабри–Перо составил kT  = 0,44 нм/°С. Изготовлена матрица микрорезонаторов Фабри–Перо с резонаторами-пикселями в виде квадратов 8 × 8 мкм2 с зазором 2 мкм в количестве 640 × 480 штук. Показано, что характеристики разработанной системы термовизуализации не уступают тепловизионным системам сопоставимого класса

Photoactive Properties of Transport Sol-Gel Layers Based on Strontium Titanate for Perovskite Solar Cells

In this work, we have investigated the photocurrent and spectral sensitivity of the silicon/SrTiO3:xNb/perovskite structures. The sol–gel method carried out the deposition of undoped SrTiO3 layers as well as niobium-doped (SrTiO3:Nb) layers at atomic concentrations of 3 and 6% Nb. The perovskite layer, CH3NH3PbI3_xClx, has been deposited by the vacuum co-evaporation technique. The layers have been characterized by scanning electron microscopy and X-ray diffraction measurements. The volt–ampere characteristics and spectral sensitivity of the fabricated samples have been measured under illumination with selective wavelengths of 405, 450, 520, 660, 780, 808, 905, 980, and 1064 nm of laser diodes. We have shown that for different configurations of applied voltage between silicon, SrTiO3:xNb, and CH3NH3PbI3_xClx, the structures are photosensitive ones with a variation of photocurrent from microamperes to milliamperes depending on Nb concentration in SrTiO3, and the highest photocurrent and spectral sensitivity values are observed when a SrTiO3:Nb layer with 3 at.% of Nb is used. A possible application of the proposed structure with a SrTiO3:Nb layer for perovskite solar cells and photodetectors is being discussed